Description
MOSFET 2N-CH 30V 5.7A 8SOIC Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25~C: 5.7A Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 3V @ 250米A Gate Charge (Qg) @ Vgs: 12.9nC @ 10V Input Capacitance (Ciss) @ Vds: 608pF @ 15V Power - Max: 1.8W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO
Part Number | ZXMN3F31DN8TA |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Diodes Incorporated |
Description | MOSFET 2N-CH 30V 5.7A 8SOIC |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 5.7A |
Rds On (Max) @ Id, Vgs | 24 mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 12.9nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 608pF @ 15V |
Power - Max | 1.8W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |
Image |
ZXMN3F31DN8TA
PAM/DIODES
20000
0.43
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28500
1.815
HK HEQING ELECTRONICS LIMITED
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DIODES INCORPORATED
500
3.2
SEHOT CO., LIMITED
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11700
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CIS Ltd (CHECK IC SOLUTION LIMITED)
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25868
5.97
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