Description
MOSFET 2N-CH 30V 2.9A 8MLP Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25~C: 2.9A Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 1V @ 250米A (Min) Gate Charge (Qg) @ Vgs: 3.9nC @ 10V Input Capacitance (Ciss) @ Vds: 190pF @ 25V Power - Max: 1.13W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-MLP (3x2)
Part Number | ZXMN3AM832TA |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Diodes Incorporated |
Description | MOSFET 2N-CH 30V 2.9A 8MLP |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 2.9A |
Rds On (Max) @ Id, Vgs | 120 mOhm @ 2.5A, 10V |
Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs | 3.9nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 190pF @ 25V |
Power - Max | 1.13W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-VDFN Exposed Pad |
Supplier Device Package | 8-MLP (3x2) |
Image |
ZXMN3AM832TA
PAM/DIODES
3000
0.14
Gallop Great Holdings (Hong Kong) Limited
ZXMN3AM832TA
DIODES
6540
0.7375
ONSTAR ELECTRONICS CO., LIMITED
ZXMN3AM832TA
DIODES INCORPORATED
30000
1.335
Hong Kong Capital Industrial Co.,Ltd
ZXMN3AM832TA
DIODES/
3000
1.9325
Yingxinyuan INT'L (Group) Limited
ZXMN3AM832TA
Diodes Inc
63398
2.53
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED