Description
MOSFET 2N-CH 20V 5.9A 8SOIC Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25~C: 5.9A Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.9A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250米A (Min) Gate Charge (Qg) @ Vgs: 22.1nC @ 5V Input Capacitance (Ciss) @ Vds: 1880pF @ 10V Power - Max: 1.8W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SOP
Part Number | ZXMN2A04DN8TC |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Diodes Incorporated |
Description | MOSFET 2N-CH 20V 5.9A 8SOIC |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 5.9A |
Rds On (Max) @ Id, Vgs | 25 mOhm @ 5.9A, 4.5V |
Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs | 22.1nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 1880pF @ 10V |
Power - Max | 1.8W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SOP |
Image |
ZXMN2A04DN8TC
PAM/DIODES
8000
1.3
MY Group (Asia) Limited
ZXMN2A04DN8TC
DIODES
20000
2.2175
SUNTOP SEMICONDUCTOR CO., LIMITED
ZXMN2A04DN8TC
DIODES INCORPORATED
2500
3.135
HK HEQING ELECTRONICS LIMITED
ZXMN2A04DN8TC
DIODES/
4868000
4.0525
Shenzhen WTX Capacitor Co., Ltd.
ZXMN2A04DN8TC
Diodes Inc
35720
4.97
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED