Description
MOSFET N/P-CH 30V 6.8A/4.9A 8SO Series: - FET Type: N and P-Channel FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25~C: 6.8A, 4.9A Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 3V @ 250米A Gate Charge (Qg) @ Vgs: 12.9nC @ 10V Input Capacitance (Ciss) @ Vds: 608pF @ 15V Power - Max: 1.8W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO
Part Number | ZXMC3F31DN8TA |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Diodes Incorporated |
Description | MOSFET N/P-CH 30V 6.8A/4.9A 8SO |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | N and P-Channel |
FET Feature | Logic Level Gate, 4.5V Drive |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 6.8A, 4.9A |
Rds On (Max) @ Id, Vgs | 24 mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 12.9nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 608pF @ 15V |
Power - Max | 1.8W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |
Image |
Hot Offer
ZXMC3F31DN8TA
Diodes Inc
100000
6.15
Shenzhen LCXW Semiconductor Co., Ltd
ZXMC3F31DN8TA
PAM/DIODES
5000000
1.86
Hongkong Shengshi Electronics Limited
ZXMC3F31DN8TA
DIODES
500
2.9325
Gallop Great Holdings (Hong Kong) Limited
ZXMC3F31DN8TA
DIODES INCORPORATED
220360
4.005
Cinty Int'l (HK) Industry Co., Limited
ZXMC3F31DN8TA
DIODES/
65000
5.0775
N&S Electronic Co., Limited