(4/5) based on 10 customer reviews
Description
Feb 24, 2017 We request that you acknowledge receipt of this notification within 30 days of the date of this PCN. If you require samples for evaluation MOSI. MISO. IRQ. RV1. 10K. VDD. 2. 1. 3. SW1. 30V; 200mA. OS102011MS2QN1. High = TX. Low = RX. VDD. Q1. ZVP3306A . R1. 10k; 1%. VDDRF. VDDRF. ZVP3306A . Single. No. 60. 20. 0.16. 0.625. 14000. -. -. 50. -. -. E-Line. ZVP3306F. Single. No. 60. 20. 0.09. 0.33. 14000. -. -. 50. -. -. SOT23. ZXMP7A17G. Single.
| Part Number | ZVP3306A |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Diodes Incorporated |
| Description | MOSFET P-CH 60V 160MA TO92-3 |
| Series | - |
| Packaging | Bulk |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 160mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 18V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 625mW (Ta) |
| Rds On (Max) @ Id, Vgs | 14 Ohm @ 200mA, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-92-3 |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Image |  |
ZVP3306A
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21800
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Gallop Great Holdings (Hong Kong) Limited
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Cinty Int'l (HK) Industry Co., Limited
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DIODES INCORPORATED
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70580
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Ande Electronics Co., Limited
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Diodes Inc
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N&S Electronic Co., Limited
