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Description
Datasheet 0.65. . . VGS=10V,ID=3A. VGS=5V, ID=1.5A. Forward. Transconductance. (1)( 2) gfs. 600. mS. VDS=25V,ID=3A. E-Line. TO92 Compatible. ZVN4310A . 3-393. SOT223. ZXMN10A11K. Single. N. 100. 20. 3.5. 4.06. 350. 450 (@6V). -. 274. 5.4. TO252-3L. ZVN4310A . Single. N. 100. 20. 0.9. 0.85. 500. 650 (@5V). -. 350. 274. 3.5 @ 5V. 5.4. SOT223. ZXMN10A11K. Single. No. 100 20. 3.5. 8.5. 350. 450 @ 6V. -. 274. 3.5 @ 5V. 5.4. TO252 (DPAK). ZVN4310A . Single. No. 100 20.
| Part Number | ZVN4310A |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Diodes Incorporated |
| Description | MOSFET N-CH 100V 0.9A TO92-3 |
| Series | - |
| Packaging | Bulk |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 900mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 850mW (Ta) |
| Rds On (Max) @ Id, Vgs | 500 mOhm @ 3A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-92-3 |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Image |  |
ZVN4310A
PAM/DIODES
20000
1.77
SUNTOP SEMICONDUCTOR CO., LIMITED
ZVN4310A
DIODES
7882
2.7975
XieDa Electronic Technology Limited
ZVN4310A
DIODES INCORPORATED
5789
3.825
HK HEQING ELECTRONICS LIMITED
ZVN4310A
DIODES/
500
4.8525
HK FEILIDI ELECTRONIC CO., LIMITED
ZVN4310A
Diodes Inc
12000
5.88
SEHOT CO., LIMITED
