Description
IC=-5A, IB=-300mA*. Base-Emitter. Saturation Voltage. VBE(sat). -960. -1100. mV . IC=-5A, IB=-300mA*. E-Line. TO92 Compatible. 949. 3-312. C. B. E. ZTX949 e. ZTx949 . -30. -4.5. -20. 1.2. 100. -1. 75. -5. -100. -1/-20. -320. -5/-300. 100. -. E- Line. DMJT9435. -30. -3. -5. 1.2. 110. -1.2. 90. -3. -275. -1.2/-20. -550. -3/-300. 160. Feb 24, 2017 FMMT624TA. ZTX551. ZTX949 . ZXMN6A11ZTA. BCX5210TA. FCX591ATA. FMMT625TA. ZTX553. ZTX951. ZXTN10150DZTA. BCX5216TA. Sep 24, 2010 ZXTC2045E6TA. ZTX948. ZXTC6717MCTA. ZTX948STZ. ZXTC6718MCTA. ZTX949 . ZXTC6719MCTA. ZTX949STZ. ZXTC6720MCTA. ZTX951. This application note is intended to provide detailed explanations about parameters and diagrams included in the datasheet of trench-gate field stop IGBTs
Part Number | ZTX949 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | Diodes Incorporated |
Description | TRANS PNP 30V 4.5A E-LINE |
Series | - |
Packaging | Bulk |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 4.5A |
Voltage - Collector Emitter Breakdown (Max) | 30V |
Vce Saturation (Max) @ Ib, Ic | 320mV @ 300mA, 5A |
Current - Collector Cutoff (Max) | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1A, 1V |
Power - Max | 1.58W |
Frequency - Transition | 100MHz |
Operating Temperature | -55°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | E-Line-3 |
Supplier Device Package | E-Line (TO-92 compatible) |
Image |
ZTX949
PAM/DIODES
2000
0.64
Hong Kong Fly Bird Technology Limited
ZTX949
DIODES
20
1.565
Bonase Electronics (HK) Co., Limited
ZTX949
DIODES INCORPORATED
20000
2.49
SUNTOP SEMICONDUCTOR CO., LIMITED
ZTX949
DIODES/
136105
3.415
Cicotex Electronics (HK) Limited
ZTX949
Diodes Inc
6425
4.34
E-CORE COMPONENT CO., LIMITED