Part Number | STD16N65M2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Diodes Incorporated |
Description | MOSFET N-CH 650V 11A DPAK |
Series | MDmesh,M2 |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 19.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 718pF @ 100V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 110W (Tc) |
Rds On (Max) @ Id, Vgs | 360 mOhm @ 5.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DPAK |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
STD16N65M2
PAM/DIODES
445
0.66
HK XINYI COMPONENTS ASIA CO., LIMITED
STD16N65M2
DIODES
6829
1.9275
Corechips Co., Limited
STD16N65M2
DIODES INCORPORATED
605
3.195
Cinty Int'l (HK) Industry Co., Limited
STD16N65M2
DIODES/
2149
4.4625
Shenzhen WTX Capacitor Co., Ltd.
STD16N65M2
Diodes Inc
3732
5.73
Kunlida Electronics (HK) Limited