Part Number | STD16N60M2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Diodes Incorporated |
Description | MOSFET N-CH 600V 12A DPAK |
Series | MDmesh,M2 |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 19nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 700pF @ 100V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 110W (Tc) |
Rds On (Max) @ Id, Vgs | 320 mOhm @ 6A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DPAK |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
STD16N60M2
PAM/DIODES
20000
0.31
HK XINYI COMPONENTS ASIA CO., LIMITED
STD16N60M2
DIODES
18748
1.1025
LIXINC Electronics Co., Limited
STD16N60M2
DIODES INCORPORATED
12000
1.895
Bonase Electronics (HK) Co., Limited
STD16N60M2
DIODES/
368000
2.6875
Shenzhen WTX Capacitor Co., Ltd.
STD16N60M2
Diodes Inc
36953
3.48
N&S Electronic Co., Limited