Part Number | SI7686DP-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Diodes Incorporated |
Description | MOSFET N-CH 30V 35A PPAK SO-8 |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1220pF @ 15V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 5W (Ta), 37.9W (Tc) |
Rds On (Max) @ Id, Vgs | 9.5 mOhm @ 13.8A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK SO-8 |
Package / Case | PowerPAK SO-8 |
Image |
SI7686DP-T1-E3
PAM/DIODES
4300
0.6
HK HEQING ELECTRONICS LIMITED
SI7686DP-T1-E3
DIODES
2072
2.0325
Cicotex Electronics (HK) Limited
SI7686DP-T1-E3
DIODES INCORPORATED
4358
3.465
Nosin (HK) Electronics Co.
SI7686DP-T1-E3
DIODES/
2646
4.8975
Gallop Great Holdings (Hong Kong) Limited
SI7686DP-T1-E3
Diodes Inc
6572
6.33
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED