Description
Datasheet NTMFS5832NLT1G . DFN5. (Pb-Free). 1500/Tape & Reel. For information on tape and reel specifications, including part orientation and tape sizes, please.
Part Number | NTMFS5832NLT1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Diodes Incorporated |
Description | MOSFET N-CH 40V 110A SO-8FL |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 20A (Ta), 111A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 51nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2700pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 3.1W (Ta), 96W (Tc) |
Rds On (Max) @ Id, Vgs | 4.2 mOhm @ 20A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
Package / Case | 8-PowerTDFN, 5 Leads |
Image |
NTMFS5832NLT1G
PAM/DIODES
72320
1.67
IC Chip Co., Ltd.
NTMFS5832NLT1G
DIODES
1500
2.705
HK HEQING ELECTRONICS LIMITED
NTMFS5832NLT1G
DIODES INCORPORATED
5000000
3.74
Hongkong Shengshi Electronics Limited
NTMFS5832NLT1G
DIODES/
3755
4.775
Belt (HK) Electronics Co
NTMFS5832NLT1G
Diodes Inc
3000
5.81
Nosin (HK) Electronics Co.