Part Number | MUN2211T3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Diodes Incorporated |
Description | TRANS PREBIAS NPN 338MW SC59 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 10k |
Resistor - Emitter Base (R2) (Ohms) | 10k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 338mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SC-59 |
Image |
MUN2211T3
PAM/DIODES
8000
0.31
MY Group (Asia) Limited
MUN2211T3
DIODES
3260
1.3
ONSTAR ELECTRONICS CO., LIMITED
MUN2214T1G
DIODES INCORPORATED
3000
2.29
Takson Electronics (H.K.) Co., Ltd.
MUN2211JT1G
DIODES/
36000
3.28
Yingxinyuan INT'L (Group) Limited
MUN2211T1G
Diodes Inc
9000
4.27
Pacific Corporation