Part Number | MMBTH10 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - RF |
Brand | Diodes Incorporated |
Description | TRANSISTOR RF NPN SOT-23 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 25V |
Frequency - Transition | 650MHz |
Noise Figure (dB Typ @ f) | - |
Gain | - |
Power - Max | 225mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 4mA, 10V |
Current - Collector (Ic) (Max) | 50mA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SOT-23-3 (TO-236) |
Image |
MMBTH10
PAM/DIODES
4908
1.44
Hongkong Truly Electronics Tech Co.,Ltd
MMBTH10
DIODES
9000
2.4275
LINK ELECTRONICS LIMITED
MMBTH10
DIODES INCORPORATED
52300
3.415
KHWY GROUP LIMITED
MMBTH10
DIODES/
30000
4.4025
Yingxinyuan INT'L (Group) Limited
MMBTH10
Diodes Inc
50000
5.39
Belt (HK) Electronics Co