(5/5) based on 8 customer reviews
Description
Revised:01/19/16. MBR10150CT 2x 5A, 150V, TO-220AB Common Cathode. MBR10150CT . Maximum Ratings. Pin out. RoHS Pb. Parameters. Symbol. Marking ID. Packing. TO-220-3 (2). MBR10150CT -E1. MBR10150CT -E1. 50 Pieces/Tube. TO-220-3 (2). MBR10150CT -G1. MBR10150CT -G1. 50 Pieces/ Tube. MOSPEC. MBR10150CT . Schottky Barrier Rectifiers. Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal. MBR10150CT thru 10200CT. FEATURES. Metal of silicon rectifier,majority carrier conducton. Guard ring for transient protection. Low power loss, high efficiency. Jan 1, 2013 TC = 125 C. Peak Forward Surge. Current. IFSM. 120A. 8.3ms half sine. Maximum. Instantaneous. Forward Voltage. MBR10150CT . VF .92V.
| Part Number | MBR10150CT |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Diodes - Rectifiers - Arrays |
| Brand | Diodes Incorporated |
| Description | DIODE ARRAY SCHOTTKY 150V TO220 |
| Series | - |
| Packaging | Tube |
| Diode Configuration | 1 Pair Common Cathode |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 150V |
| Current - Average Rectified (Io) (per Diode) | 5A |
| Voltage - Forward (Vf) (Max) @ If | 930mV @ 5A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 1mA @ 150V |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220AB |
| Image |  |
MBR10150CT
PAM/DIODES
30000
1.61
QUARKTWIN TECHNOLOGY LIMITED
MBR10150CT
DIODES
906
3.0125
Bonase Electronics (HK) Co., Limited
MBR10150CT
DIODES INCORPORATED
6000
4.415
KK Wisdom Limited
MBR10150CT
DIODES/
37830
5.8175
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
MBR10150CT
Diodes Inc
12000
7.22
CIS Ltd (CHECK IC SOLUTION LIMITED)
