Part Number | IXFP22N65X2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Diodes Incorporated |
Description | MOSFET N-CH 650V 22A TO-220 |
Series | HiPerFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5.5V @ 1.5mA |
Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2310pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 390W (Tc) |
Rds On (Max) @ Id, Vgs | 160 mOhm @ 11A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220 |
Package / Case | TO-220-3 |
Image |
IXFP22N65X2
PAM/DIODES
11625
0.32
N&S Electronic Co., Limited
IXFP22N65X2
DIODES
5800
1.3025
Hong Kong YST Electronics Co., Limited
IXFP22N65X2
DIODES INCORPORATED
16660
2.285
LvangChip(HongKong)Co.,Limited
IXFP22N65X2
DIODES/
1000
3.2675
Hong Kong Maoshuo Electronics Co.,Limited
IXFP22N65X2
Diodes Inc
2400
4.25
RX ELECTRONICS LIMITED