Part Number | IRFU120NPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Diodes Incorporated |
Description | MOSFET N-CH 100V 9.4A I-PAK |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 9.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 330pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 48W (Tc) |
Rds On (Max) @ Id, Vgs | 210 mOhm @ 5.6A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | IPAK (TO-251) |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Image |
Hot Offer
IRFU120NPBF
DIODES INCORPORATED
5000
1.625
Muz Technology Co.,Ltd
IRFU120NPBF
DIODES/
10000
2.3675
Kinghead Electronics Co.,Limited
IRFU120NPBF
Diodes Inc
30000
3.11
Shenzhen Dacheng Communication Co., Ltd
IRFU120NPBF
PAM/DIODES
28894
0.14
HK HEQING ELECTRONICS LIMITED
IRFU120NPBF
DIODES
115711
0.8825
Cicotex Electronics (HK) Limited