Description
MOSFET N-CH 60V 195A D2PAK Series: HEXFET? Amplifier Type: -55°C ~ 175°C (TJ) Applications: Surface Mount Capacitance: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Part Number | IRFS3006PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Diodes Incorporated |
Description | MOSFET N-CH 60V 195A D2PAK |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 300nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 8970pF @ 50V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 375W (Tc) |
Rds On (Max) @ Id, Vgs | 2.5 mOhm @ 170A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
IRFS3006PBF
PAM/DIODES
6000
0.62
NOSIN (HK) ELECTRONICS CO., LIMITED
IRFS3006PBF
DIODES
16000
1.66
N&S Electronic Co., Limited
IRFS3006PBF
DIODES INCORPORATED
600
2.7
Yingxinyuan INT'L (Group) Limited
IRFS3006PBF
DIODES/
1750
3.74
RX ELECTRONICS LIMITED
IRFS3006PBF
Diodes Inc
8000
4.78
HK HUIXINLAI TECHNOLOGY CO., LIMITED