Part Number | DN2625DK6-G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Diodes Incorporated |
Description | MOSFET 2N-CH 250V 1.1A 8VDFN |
Series | - |
Packaging | Tray |
FET Type | 2 N-Channel (Dual) |
FET Feature | Depletion Mode |
Drain to Source Voltage (Vdss) | 250V |
Current - Continuous Drain (Id) @ 25°C | 1.1A |
Rds On (Max) @ Id, Vgs | 3.5 Ohm @ 1A, 0V |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | 7.04nC @ 1.5V |
Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 25V |
Power - Max | - |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-VDFN Exposed Pad |
Supplier Device Package | 8-DFN (5x5) |
Image |
DN2625DK6-G
PAM/DIODES
938
1.45
MeiChuangXinKe (SZ) Electronics Co., Ltd.
DN2625DK6-G
DIODES
3337
1.9775
ROSSONIX CO.,LTD
DN2625DK6-G
DIODES INCORPORATED
7213
2.505
DINGSEN ELECTRONICS TECHNOLOGY CO., LIMITED
DN2625DK6-G
DIODES/
3828
3.0325
HONG KONG BOCETON ELECTRONIC TECHNOLOGY CO., LIMITED
DN2625DK6-G
Diodes Inc
3489
3.56
Dedicate Electronics (HK) Limited