Part Number | DMT8012LK3-13 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Diodes Incorporated |
Description | MOSFET N-CH 80V 9.5A TO252 |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 80V |
Current - Continuous Drain (Id) @ 25°C | 44A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 34nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1949pF @ 40V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 2.7W (Ta) |
Rds On (Max) @ Id, Vgs | 17 mOhm @ 12A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-252 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
DMT8012LK3-13
PAM/DIODES
9666
0.46
Finestock Electronics HK Limited
DMT8012LK3-13
DIODES
1133
1.5025
Hongkong Shengshi Electronics Limited
DMT8012LK3-13**
DIODES INCORPORATED
1296
2.545
Ande Electronics Co., Limited
DMT8012LK3-13
DIODES/
9667
3.5875
SEHOT CO., LIMITED
DMT8012LK3-13
Diodes Inc
1907
4.63
Yingxinyuan INT'L (Group) Limited