Part Number | DMT8012LFG-7 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Diodes Incorporated |
Description | MOSFET N-CH 80V 9.5A PWDI3333-8 |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 80V |
Current - Continuous Drain (Id) @ 25°C | 9.5A (Ta), 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 34nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1949pF @ 40V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 2.2W (Ta), 30W (Tc) |
Rds On (Max) @ Id, Vgs | 16 mOhm @ 12A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerDI3333-8 |
Package / Case | 8-PowerWDFN |
Image |
DMT8012LFG-7
PAM/DIODES
8900
1.24
Hongkong Shengshi Electronics Limited
DMT8012LFG-7
DIODES
5598
2.1125
SUNTOP SEMICONDUCTOR CO., LIMITED
DMT8012LFG-7
DIODES INCORPORATED
1204
2.985
Fairstock HK Limited
DMT8012LFG-7
DIODES/
9634
3.8575
ONSTAR ELECTRONICS CO., LIMITED
DMT8012LFG-7
Diodes Inc
2934
4.73
KK Wisdom Limited