Part Number | DMT6015LSS-13 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Diodes Incorporated |
Description | MOSFET N-CHA 60V 9.2A SO8 |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 9.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 18.9nC @ 30V |
Input Capacitance (Ciss) (Max) @ Vds | 1103pF @ 30V |
Vgs (Max) | ±16V |
FET Feature | - |
Power Dissipation (Max) | 1.5W (Ta) |
Rds On (Max) @ Id, Vgs | 16 mOhm @ 10A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
DMT6015LSS-13
PAM/DIODES
7390
0.9
Hongkong Shengshi Electronics Limited
DMT6015LSS-13
DIODES
1618
2.1975
Far East Electronics Technology Limited
DMT6015LSS-13
DIODES INCORPORATED
8968
3.495
LINK ELECTRONICS LIMITED
DMT6015LSS-13
DIODES/
8773
4.7925
Hong Kong Capital Industrial Co.,Ltd
DMT6015LSS-13
Diodes Inc
7528
6.09
Ande Electronics Co., Limited