(5/5) based on 2 customer reviews
Description
MOSFET 2N-CH 30V 8A V-DFN3030-8 Series: - FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25～C: 8A, 10.7A Rds On (Max) @ Id, Vgs: 20 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250米A Gate Charge (Qg) @ Vgs: 13.2nC @ 10V Input Capacitance (Ciss) @ Vds: 641pF @ 15V Power - Max: 1.9W Operating Temperature: -55～C ~ 150～C (TJ) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: V-DFN3030-8
| Part Number | DMT3011LDT-7 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | Diodes Incorporated |
| Description | MOSFET 2N-CH 30V 8A V-DFN3030-8 |
| Series | - |
| Packaging | Cut Tape (CT) |
| FET Type | 2 N-Channel (Dual) Asymmetrical |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8A, 10.7A |
| Rds On (Max) @ Id, Vgs | 20 mOhm @ 6A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 13.2nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 641pF @ 15V |
| Power - Max | 1.9W |
| Operating Temperature | -55°C ~ 155°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-VDFN Exposed Pad |
| Supplier Device Package | V-DFN3030-8 (Type K) |
| Image |  |
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