Part Number | DMT10H010LK3-13 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Diodes Incorporated |
Description | MOSFET N-CH 100V 68.8A TO252-3 |
Series | - |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 68.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 53.7nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2592pF @ 50V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 3W (Ta) |
Rds On (Max) @ Id, Vgs | 8.8 mOhm @ 13A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-252, (D-Pak) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
DMT10H010LK3-13
PAM/DIODES
5924
1.56
Finestock Electronics HK Limited
DMT10H010LK3-13
DIODES
6482
2.31
Hongkong Shengshi Electronics Limited
DMT10H010LK3-13
DIODES INCORPORATED
2883
3.06
Cinty Int'l (HK) Industry Co., Limited
DMT10H010LK3-13
DIODES/
1502
3.81
KK Wisdom Limited
DMT10H010LK3-13
Diodes Inc
6910
4.56
CIS Ltd (CHECK IC SOLUTION LIMITED)