Part Number | DMN6013LFGQ-7 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Diodes Incorporated |
Description | MOSFET NCH 60V 10.3A POWERDI |
Series | Automotive, AEC-Q101 |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 10.3A (Ta), 45A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 55.4nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2577pF @ 30V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1W (Ta) |
Rds On (Max) @ Id, Vgs | 13 mOhm @ 10A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerDI3333-8 |
Package / Case | 8-PowerVDFN |
Image |
DMN6013LFGQ-7
PAM/DIODES
5000000
1.9
Hongkong Shengshi Electronics Limited
DMN6013LFGQ-7
DIODES
568000
2.68
Shenzhen Xinderun Electronic Technology Co., Ltd.
DMN6013LFGQ-7
DIODES INCORPORATED
20000
3.46
SUNTOP SEMICONDUCTOR CO., LIMITED
DMN6013LFGQ-7
DIODES/
20000
4.24
YUAN CHUANG CHENG (HK) Co,.ltd
DMN6013LFGQ-7
Diodes Inc
16000
5.02
Finestock Electronics HK Limited