Part Number | DMN6013LFG-7 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Diodes Incorporated |
Description | MOSFET N-CH 60V 10.3A PWDI3333-8 |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 10.3A (Ta), 45A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 55.4nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2577pF @ 30V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 1W (Ta) |
Rds On (Max) @ Id, Vgs | 13 mOhm @ 10A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerDI3333-8 |
Package / Case | 8-PowerWDFN |
Image |
DMN6013LFG-7
PAM/DIODES
7335
0.11
Hongkong Shengshi Electronics Limited
DMN6013LFG-7
DIODES
4260
1.1125
MY Group (Asia) Limited
DMN6013LFG-7
DIODES INCORPORATED
3517
2.115
ONSTAR ELECTRONICS CO., LIMITED
DMN6013LFG-7
DIODES/
7799
3.1175
Southern Electronics Tech Limited
DMN6013LFG-7
Diodes Inc
3025
4.12
KK Wisdom Limited