Description
MOSFET 2N-CH 30V 6.2A U-DFN2020 Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25~C: 6.2A Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 2V @ 250米A Gate Charge (Qg) @ Vgs: 10.6nC @ 10V Input Capacitance (Ciss) @ Vds: 500pF @ 15V Power - Max: 1W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6
Part Number | DMN3032LFDBQ-7 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Diodes Incorporated |
Description | MOSFET 2N-CH 30V 6.2A U-DFN2020 |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | 2 N-Channel (Dual) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 6.2A |
Rds On (Max) @ Id, Vgs | 30 mOhm @ 5.8A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 10.6nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 500pF @ 15V |
Power - Max | 1W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-UDFN Exposed Pad |
Supplier Device Package | U-DFN2020-6 (Type B) |
Image |
DMN3032LFDBQ-7
PAM/DIODES
16000
0.81
Finestock Electronics HK Limited
DMN3032LFDBQ-7
DIODES
8350
1.52
ONSTAR ELECTRONICS CO., LIMITED
DMN3032LFDBQ-7
DIODES INCORPORATED
5000000
2.23
Hongkong Shengshi Electronics Limited
DMN3032LFDBQ-7
DIODES/
2000
2.94
Shenzhen yuan core love electronic commerce co., LTD
DMN3032LFDBQ-7
Diodes Inc
5500
3.65
AAC Technology Co., Limited