Part Number | DMN2600UFB-7 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Diodes Incorporated |
Description | MOSFET N-CH 25V 1.3A DFN1006-3 |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25°C | 1.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 0.85nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 70.13pF @ 15V |
Vgs (Max) | ±8V |
FET Feature | - |
Power Dissipation (Max) | 540mW (Ta) |
Rds On (Max) @ Id, Vgs | 350 mOhm @ 200mA, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 3-DFN1006 (1.0x0.6) |
Package / Case | 3-UFDFN |
Image |
DMN2600UFB-7
PAM/DIODES
20000
0.67
SUNTOP SEMICONDUCTOR CO., LIMITED
DMN2600UFB-7
DIODES
5000
1.675
Hong Kong In Fortune Electronics Co., Limited
DMN2600UFB-7
DIODES INCORPORATED
75
2.68
Gallop Great Holdings (Hong Kong) Limited
DMN2600UFB-7
DIODES/
9986
3.685
AoHoo Enterprise (HongKong) Co., Limited
DMN2600UFB-7
Diodes Inc
24000
4.69
SEHOT CO., LIMITED