Description
MOSFET 2N-CH 20V 4.7A 6UDFN Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25~C: 4.7A Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.2A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250米A Gate Charge (Qg) @ Vgs: 15nC @ 8V Input Capacitance (Ciss) @ Vds: 713pF @ 10V Power - Max: 1.4W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6
Part Number | DMN2041UFDB-13 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Diodes Incorporated |
Description | MOSFET 2N-CH 20V 4.7A 6UDFN |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | 2 N-Channel (Dual) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 4.7A |
Rds On (Max) @ Id, Vgs | 40 mOhm @ 4.2A, 4.5V |
Vgs(th) (Max) @ Id | 1.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds | 713pF @ 10V |
Power - Max | 1.4W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-UDFN Exposed Pad |
Supplier Device Package | U-DFN2020-6 |
Image |
DMN2041UFDB-13
PAM/DIODES
8000
1.56
MY Group (Asia) Limited
DMN2041UFDB-13
DIODES
568000
2.4975
Shenzhen Xinderun Electronic Technology Co., Ltd.
DMN2041UFDB-13
DIODES INCORPORATED
20000
3.435
SUNTOP SEMICONDUCTOR CO., LIMITED
DMN2041UFDB-13
DIODES/
8500
4.3725
HK Niuhuasi Technology Limited
DMN2041UFDB-13
Diodes Inc
3260
5.31
ONSTAR ELECTRONICS CO., LIMITED