(4/5) based on 13 customer reviews
Description
MOSFET 2N-CH 20V 10A 6-DFN Series: - FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25～C: 10A Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 8.5A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250米A Gate Charge (Qg) @ Vgs: 57.4nC @ 8V Input Capacitance (Ciss) @ Vds: 2607pF @ 10V Power - Max: 780mW Operating Temperature: -55～C ~ 150～C (TJ) Mounting Type: Surface Mount Package / Case: 6-VFDFN Exposed Pad Supplier Device Package: *
| Part Number | DMN2013UFX-7 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | Diodes Incorporated |
| Description | MOSFET 2N-CH 20V 10A 6-DFN |
| Series | - |
| Packaging | Cut Tape (CT) |
| FET Type | 2 N-Channel (Dual) Common Drain |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 10A |
| Rds On (Max) @ Id, Vgs | 11.5 mOhm @ 8.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 57.4nC @ 8V |
| Input Capacitance (Ciss) (Max) @ Vds | 2607pF @ 10V |
| Power - Max | 780mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-VFDFN Exposed Pad |
| Supplier Device Package | W-DFN5020-6 |
| Image |  |
DMN2013UFX-7
PAM/DIODES
8966
0.57
ONSTAR ELECTRONICS CO., LIMITED
DMN2013UFX-7
DIODES
310000
1.64
N&S Electronic Co., Limited
DMN2013UFX-7
DIODES INCORPORATED
30000
2.71
Nosin (HK) Electronics Co.
DMN2013UFX-7
DIODES/
192492
3.78
CIS Ltd (CHECK IC SOLUTION LIMITED)
DMN2013UFX-7
Diodes Inc
1988
4.85
Hongkong Viltz Electronics Co, Limited
