Part Number | DMN2013UFDE-7 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Diodes Incorporated |
Description | MOSFET N-CH 20V 10.5A U-DFN |
Series | - |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 10.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 25.8nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds | 2453pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 660mW (Ta) |
Rds On (Max) @ Id, Vgs | 11 mOhm @ 8.5A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | U-DFN2020-6 (Type E) |
Package / Case | 6-UDFN Exposed Pad |
Image |
DMN2013UFDE-7
PAM/DIODES
5000000
1.73
Hongkong Shengshi Electronics Limited
DMN2013UFDE-7
DIODES
8710
2.395
ONSTAR ELECTRONICS CO., LIMITED
DMN2013UFDE-7 AP2501AS-13
DIODES INCORPORATED
11860
3.06
N&S Electronic Co., Limited
DMN2013UFDE-7
DIODES/
46
3.725
Yingxinyuan INT'L (Group) Limited
DMN2013UFDE-7
Diodes Inc
24000
4.39
CIS Ltd (CHECK IC SOLUTION LIMITED)