Part Number | DMN2005UFG-13 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Diodes Incorporated |
Description | MOSFET N-CH 20V 18.1A POWERDI-8 |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 18.1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Vgs(th) (Max) @ Id | 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 164nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 6495pF @ 10V |
Vgs (Max) | ±12V |
FET Feature | - |
Power Dissipation (Max) | 1.05W (Ta) |
Rds On (Max) @ Id, Vgs | 4.6 mOhm @ 13.5A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerDI3333-8 |
Package / Case | 8-PowerWDFN |
Image |
DMN2005UFG-13
PAM/DIODES
3000
0.83
KK Wisdom Limited
DMN2005UFG-13
DIODES
3000
1.62
SEHOT CO., LIMITED
DMN2005UFG-13
DIODES INCORPORATED
97826
2.41
Hongkong Viltz Electronics Co, Limited
DMN2005UFG-13
DIODES/
2245
3.2
Xinyihui Electronic Technology Limited
DMN2005UFG-13
Diodes Inc
2245
3.99
Huajiaxin Electronic Technology (Hong Kong) Co., Limited