Part Number | DMN10H170SFDE-7 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Diodes Incorporated |
Description | MOSFET N-CH 100V 2.9A 6UDFN |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 2.9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 9.7nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1167pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 660mW (Ta) |
Rds On (Max) @ Id, Vgs | 160 mOhm @ 5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | U-DFN2020-6 (Type E) |
Package / Case | 6-UDFN Exposed Pad |
Image |
DMN10H170SFDE-7
PAM/DIODES
5000000
1.27
Hongkong Shengshi Electronics Limited
DMN10H170SFDE-7
DIODES
32000
1.9625
CIS Ltd (CHECK IC SOLUTION LIMITED)
DMN10H170SFDE-7
DIODES INCORPORATED
9654
2.655
Yingxinyuan INT'L (Group) Limited
DMN10H170SFDE-7
DIODES/
3540
3.3475
ONSTAR ELECTRONICS CO., LIMITED
DMN10H170SFDE-7 B345AF-13
Diodes Inc
12760
4.04
N&S Electronic Co., Limited