Part Number | DMN10H099SFG-13 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Diodes Incorporated |
Description | MOSFET N-CH 100V 4.2A |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 4.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 25.2nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1172pF @ 50V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 980mW (Ta) |
Rds On (Max) @ Id, Vgs | 80 mOhm @ 3.3A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerDI3333-8 |
Package / Case | 8-PowerWDFN |
Image |
DMN10H099SFG-13
PAM/DIODES
568000
0.18
Shenzhen Xinderun Electronic Technology Co., Ltd.
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N&S Electronic Co., Limited
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Ande Electronics Co., Limited
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