Part Number | DMN1019UVT-7 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Diodes Incorporated |
Description | MOSFET N-CH 12V 10.7A TSOT26 |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 10.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
Vgs(th) (Max) @ Id | 800mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 50.4nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds | 2588pF @ 10V |
Vgs (Max) | ±8V |
FET Feature | - |
Power Dissipation (Max) | 1.73W (Ta) |
Rds On (Max) @ Id, Vgs | 10 mOhm @ 9.7A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TSOT-26 |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Image |
DMN1019UVT-7
PAM/DIODES
9418
0.81
Hongkong Shengshi Electronics Limited
DMN1019UVT-7
DIODES
6985
2.0575
MY Group (Asia) Limited
DMN1019UVT-7
DIODES INCORPORATED
8030
3.305
Kunlida Electronics (HK) Limited
DMN1019UVT-7
DIODES/
5711
4.5525
XINZAN TECHNOLOGY LIMITED
DMN1019UVT-7
Diodes Inc
4648
5.8
SEHOT CO., LIMITED