Part Number | DMN1019UVT-13 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Diodes Incorporated |
Description | MOSFET N-CH 12V 10.7A TSOT26 |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 10.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 800mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 50.4nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds | 2588pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.73W (Ta) |
Rds On (Max) @ Id, Vgs | 10 mOhm @ 9.7A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TSOT-26 |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Image |
DMN1019UVT-13
PAM/DIODES
20000
0.83
YUAN CHUANG CHENG (HK) Co,.ltd
DMN1019UVT-13
DIODES
16000
1.8375
Finestock Electronics HK Limited
DMN1019UVT-13
DIODES INCORPORATED
20000
2.845
SUNTOP SEMICONDUCTOR CO., LIMITED
DMN1019UVT-13
DIODES/
3260
3.8525
ONSTAR ELECTRONICS CO., LIMITED
DMN1019UVT-13
Diodes Inc
8500
4.86
HK Niuhuasi Technology Limited