Part Number | DMN1016UCB6-7 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Diodes Incorporated |
Description | MOSFET N-CH 12V 5.5A U-WLB1510-6 |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 5.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 4.2nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 423pF @ 6V |
Vgs (Max) | ±8V |
FET Feature | - |
Power Dissipation (Max) | 920mW (Ta) |
Rds On (Max) @ Id, Vgs | 20 mOhm @ 1.5A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | U-WLB1510-6 |
Package / Case | 6-UFBGA, WLBGA |
Image |
DMN1016UCB6-7
PAM/DIODES
513
0.57
YUAN CHUANG CHENG (HK) Co,.ltd
DMN1016UCB6-7
DIODES
4614
1.6225
ONSTAR ELECTRONICS CO., LIMITED
DMN1016UCB6-7
DIODES INCORPORATED
3384
2.675
SUNTOP SEMICONDUCTOR CO., LIMITED
DMN1016UCB6-7
DIODES/
5414
3.7275
SEMICON INTERNATIONAL (HONG KONG) CO., LIMITED
DMN1016UCB6-7
Diodes Inc
8632
4.78
MY Group (Asia) Limited