Part Number | DMG4800LK3-13 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Diodes Incorporated |
Description | MOSFET N-CH 30V 10A TO252 |
Series | - |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 1.6V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 8.7nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 798pF @ 10V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 1.71W (Ta) |
Rds On (Max) @ Id, Vgs | 17 mOhm @ 9A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
DMG4800LK3-13
PAM/DIODES
5000000
1.26
Hongkong Shengshi Electronics Limited
DMG4800LK3-13
DIODES
20000
2.37
SUNTOP SEMICONDUCTOR CO., LIMITED
DMG4800LK3-13
DIODES INCORPORATED
25000
3.48
HK HEQING ELECTRONICS LIMITED
DMG4800LK3-13
DIODES/
10000
4.59
Gallop Great Holdings (Hong Kong) Limited
DMG4800LK3-13
Diodes Inc
2500
5.7
SEHOT CO., LIMITED