Description
MOSFET N/P-CH 12V 9.5A/6.9A SMD Series: - FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25~C: 9.5A, 6.9A Rds On (Max) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250米A Gate Charge (Qg) @ Vgs: 35.4nC @ 10V Input Capacitance (Ciss) @ Vds: 1787pF @ 6V Power - Max: 2.3W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8
Part Number | DMC1017UPD-13 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Diodes Incorporated |
Description | MOSFET N/P-CH 12V 9.5A/6.9A SMD |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | N and P-Channel |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 9.5A, 6.9A |
Rds On (Max) @ Id, Vgs | 17 mOhm @ 11.8A, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 35.4nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1787pF @ 6V |
Power - Max | 2.3W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN |
Supplier Device Package | PowerDI5060-8 |
Image |
DMC1017UPD-13
PAM/DIODES
568000
0.59
Shenzhen Xinderun Electronic Technology Co., Ltd.
DMC1017UPD-13
DIODES
4990
1.9675
Acon Electronics Limited
DMC1017UPD-13
DIODES INCORPORATED
20000
3.345
YUAN CHUANG CHENG (HK) Co,.ltd
DMC1017UPD-13
DIODES/
20000
4.7225
SUNTOP SEMICONDUCTOR CO., LIMITED
DMC1017UPD-13
Diodes Inc
2500
6.1
HK HEQING ELECTRONICS LIMITED