Description
Dec 7, 2012 BSC039N06NS . OptiMOS. TM. Power-Transistor. Features. Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested. 3. Material Content Data Sheet. Sales Product Name. BSC039N06NS . Issued. 15 . June 2015. MA#. MA001014856. Package. PG-TDSON-8-6. Weight*. Jul 2, 2014 220 F. 100V. +C45. 220 F. 100V. M3. BSC039N06NS . M3. BSC039N06NS . 4. 5 . 3. 6. 21. 78. M2. BSC123N08NS3 G. M2. BSC123N08NS3 G. May 4, 2012 represent a bigger share of the overall losses, so it is advantageous to opt for the BSC039N06NS . On the other hand, when the switching Mar 11, 2015 10k. TP3. VOUT. 1. TP4. GND. 1. R9. 0. C36. DNP. R35. 113k. R40. 10k. R12. 2k. Upper MOS: BSC039N06NS . Lower MOS: BSC039N06NS .
Part Number | BSC039N06NS |
Brand | Diodes Incorporated |
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BSC039N06NS
DIODES INCORPORATED
40000
2.43
HONGKONG HUIZHONGDINGTAI ELECTRONIC TECHNOLOGY LIMITED
BSC039N06NS
DIODES/
12924
3.27
SUNTOP SEMICONDUCTOR CO., LIMITED
BSC039N06NS
Diodes Inc
42019
4.11
Victory Components HK Limited
BSC039N06NS
PAM/DIODES
2569
0.75
HK HEQING ELECTRONICS LIMITED
BSC039N06NS
DIODES
2000
1.59
Nosin (HK) Electronics Co.