(4/5) based on 9 customer reviews
Description
Datasheet 1N5820 - 1N5822. 3.0A SCHOTTKY BARRIER RECTIFIERS. Features and Benefits. . Guard Ring Die Construction for Transient Protection. . Low Power Loss 1N5820 , 1N5821, 1N5822 www.vishay.com. Vishay General Semiconductor. Revision: 13-Aug-13. 1. Document Number: 88526. For technical questions within 1N5820 and 1N5822 are Preferred Devices. Axial Lead Rectifiers. This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode The 1N5820 axial leaded Schottky rectifier has been opti- mized for very low forward voltage drop, with moderate leakage. Typical applications are in switching n LOW FORWARD VOLTAGE DROP n AVALANCHE CAPABILITY SPECIFIED. FEATURES AND BENEFITS. Symbol. Parameter. Value. Unit. 1N5820 1N5821
| Part Number | 1N5820 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Diodes - Rectifiers - Single |
| Brand | Diodes Incorporated |
| Description | DIODE SCHOTTKY 20V 3A DO201AD |
| Series | - |
| Packaging | Cut Tape (CT) |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 20V |
| Current - Average Rectified (Io) | 3A |
| Voltage - Forward (Vf) (Max) @ If | 475mV @ 3A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 500µA @ 20V |
| Capacitance @ Vr, F | 190pF @ 4V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | DO-201AD, Axial |
| Supplier Device Package | DO-201AD |
| Operating Temperature - Junction | -65°C ~ 125°C |
| Image |  |
1N5820
PAM/DIODES
180
1
SUNTOP SEMICONDUCTOR CO., LIMITED
1N5820
DIODES
30000
2.515
QUARKTWIN TECHNOLOGY LIMITED
1N5820
DIODES INCORPORATED
3680
4.03
ONSTAR ELECTRONICS CO., LIMITED
1N5820
DIODES/
40000
5.545
Bonase Electronics (HK) Co., Limited
1N5820
Diodes Inc
1000
7.06
KK Wisdom Limited
